ZITI is very happy to announce the talks “Design Space Exploration for Analog Spiking Neural Networks” and “28nm Embedded RRAM for Consumer and Industrial Products: Enabling, Design, and Reliability” by Dr. Moamen El-Masry und Dr. Jan Otterstedt (Infineon) on July 22 2024. The talks will be given at 4:15 pm in room U014 of OMZ (INF 350, floor -1)
Talk Dr. El-Masry: Design Space Exploration for Analog Spiking Neural Networks
Abstract: We present an integrated system-on-module for design-space exploration of neurosynaptic behavior of complex, non-volatile memory enhanced, spiking neural networks. The system operates in a locally-analog, globally-digital manner, which enables both exploration and validation of individual computational components and characteristic spike-based features of neurosynaptic arrays. The system components are reconfigurable, adaptable and interchangeable enabling reproducible, precise firing patterns. The platform is coupled with an embedded resistive-RAM which acts as a weight retention mechanism. Experimental results obtained in 28 nm CMOS technology illustrate the feasibility of the methodology.
CV Dr. El-Masry: Moamen El-Masry is an Analog IC designer at Infineon Technologies. He earned a bachelor’s degree in electrical engineering in 2012 and a diploma in Nanoelectronics from the Information Technology Institute in Cairo, Egypt in 2014. In 2019, he completed his Master’s degree in Microelectronics and Microsystems at the Technical University of Hamburg-Harburg (TUHH). At TUHH, he worked at the Institute of Integrated Circuits, focusing on the design and development of medical implants. After his master’s, he joined an industrial PhD program to further his expertise in developing biologically inspired solutions, earning his PhD from the University of Erlangen–Nürnberg (FAU) in 2024.
Talk Dr. Otterstedt: 28nm Embedded RRAM for Consumer and Industrial Products: Enabling, Design, and Reliability
Abstract: After a long period of research and development, Infineon Technologies has recently started to sell first RRAM based products. For these new products we follow the maxim “RRAM is the new Flash”. In the presentation we will discuss design aspects of an embedded RRAM macro in a 28nm advanced logic foundry process employed for consumer and industrial products. We present high statistic reliability data of the embedded RRAM coming from test devices and first products to demonstrate the matureness and usability of the embedded emerging memory. We compare RRAM failure modes with embedded flash from the previous generations and discuss counter measures. Overall, we show, that the 28nm-embedded RRAM is an adequate and now finally available successor of embedded flash from previous generations: Today, RRAM is not an “emerging memory” anymore; it now is actually “emerged”.
CV Dr. Otterstedt: Jan Otterstedt received the Dr.-Ing. degree in electrical engineering from the University of Hannover, Germany, in 1997. Afterwards, he has joined the Semiconductor Group of Siemens, which later became the Infineon Technologies AG. Since more than 15 years, he is responsible for concept engineering for embedded non-volatile memories, mostly covering consumer and industrial applications. He now is a Senior Principal. Since 2006, Jan lectures on “Testing Digital Circuits” at the Technische Universität München (TUM).